Hf8Sb16 is an intermetallic semiconductor compound combining hafnium and antimony, belonging to the rare-earth and refractory metal compound family. This material is primarily of research interest for thermoelectric and advanced electronic applications, where its semiconducting properties and potential for high-temperature stability make it relevant to next-generation energy conversion and solid-state device development. While not yet widely deployed in mainstream engineering, hafnium antimonide compounds are studied for their potential to overcome thermal and electrical performance limitations in conventional thermoelectric materials and specialized semiconductor devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,329.8 | ksi | — | ||
Shear Modulus(G) | 7,093.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01180 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3960 | eV/atom | — |