Hf4S2 is a layered hafnium sulfide compound belonging to the transition metal dichalcogenide (TMD) family, a class of semiconductors with two-dimensional crystal structures. This material is primarily of research and developmental interest rather than established industrial production, with potential applications leveraging its semiconducting properties, mechanical stiffness, and unique layered geometry for next-generation electronic and optoelectronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 136.6 | GPa | — | ||
Shear Modulus(G) | 77.20 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00340 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.102 | eV/atom | — |