Hf4 Bi4 O16

semiconductor

· Hf4 Bi4 O16

Hf₄Bi₄O₁₆ is a mixed-metal oxide semiconductor compound combining hafnium and bismuth in an ordered crystalline structure, belonging to the broader family of complex oxides and pyrochlore-related phases. This material is primarily of research and development interest for applications requiring high-permittivity dielectrics, photocatalysis, or radiation-resistant ceramics, with potential advantages in extreme environment applications where traditional semiconductors would degrade. Compared to simpler binary oxides, hafnium-bismuth compounds offer tunable bandgaps and enhanced functionality through their complex crystal structures, making them candidates for next-generation electronic and optoelectronic devices, though commercial adoption remains limited.

research semiconductorshigh-permittivity dielectricsphotocatalytic materialsradiation-resistant ceramicsadvanced electronics (experimental)extreme environment coatings

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.051	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.447	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf4 Bi4 O16

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control