Hf4 As8

semiconductor

· Hf4 As8

Hf4As8 is a hafnium arsenide compound semiconductor belonging to the rare-earth and refractory metal pnictide family, representing an experimental or emerging material with limited industrial precedent. While not widely commercialized, hafnium arsenides are of research interest for high-temperature electronic and optoelectronic applications due to hafnium's refractory properties and the potential for wide bandgap semiconducting behavior in metal-pnictide systems. Engineers would consider this material primarily in advanced research contexts for next-generation devices requiring thermal stability or extreme-environment operation, though alternative established semiconductors (GaAs, GaN, SiC) dominate current industrial applications.

high-temperature electronics researchwide-bandgap semiconductorsrefractory compound semiconductorsextreme-environment device developmentmaterials exploration for specialized optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01560	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7490	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf4 As8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control