Hf4As4 is a hafnium arsenide compound semiconductor belonging to the refractory metal-pnictide family, characterized by high thermal and chemical stability. This material is primarily of research and exploratory interest for advanced electronic and optoelectronic applications where extreme operating conditions, wide bandgap semiconducting properties, or high-frequency performance are required. Engineers would consider hafnium arsenides in next-generation power electronics, high-temperature device research, or specialized RF/microwave applications where conventional semiconductors reach their operational limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18,834 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 10,728.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00530 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.007 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data