Hf3 Sn1 O8

semiconductor

· Hf3 Sn1 O8

Hf₃Sn₁O₈ is a hafnium-tin oxide ceramic compound belonging to the mixed-metal oxide semiconductor family. This material is primarily of research interest for its potential in high-temperature electronic and photocatalytic applications, where the combination of hafnium and tin oxides offers enhanced thermal stability and tunable bandgap characteristics compared to single-component oxides.

high-temperature ceramicsphotocatalytic devicessemiconductor researchthermal barrier coatings (experimental)optoelectronic components (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.721	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.273	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf3 Sn1 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control