Hf3 As3 Ru3

semiconductor

· Hf3 As3 Ru3

Hf₃As₃Ru₃ is an intermetallic compound combining hafnium, arsenic, and ruthenium in a 1:1:1 stoichiometric ratio. This material is primarily of research interest rather than established in high-volume engineering applications, belonging to the family of ternary transition metal arsenides that show potential for electronic, thermoelectric, or catalytic applications due to the combination of refractory (hafnium) and noble metal (ruthenium) constituents with a pnictogen (arsenic).

High-temperature electronic devices (exploratory)Thermoelectric materials researchCatalysis and electrochemistryQuantum material investigationsThin-film and semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00880	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7230	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf3 As3 Ru3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control