Hf2O3

ceramic

· Hf2O3

Hafnium dioxide (HfO2) is a high-performance ceramic oxide characterized by an extremely high melting point and exceptional thermal stability, making it a member of the refractory oxide family. It is primarily used in advanced semiconductor applications as a high-κ dielectric material in gate stacks for next-generation microelectronics, and in thermal barrier coatings for aerospace turbines operating at extreme temperatures. Engineers select HfO2 over traditional alternatives (like SiO2) when dimensional scaling demands lower leakage current in nanoscale devices or when thermal protection must exceed 1700°C in harsh environments.

semiconductor gate dielectricsthermal barrier coatings (aerospace)high-temperature refractory applicationsoptical coatingsnuclear fuel cladding

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.3400	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.340	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf2O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental