Hf2 is a hafnium-based binary compound semiconductor, likely a hafnium dihalide or similar intermetallic phase with semiconducting electronic properties. This material belongs to the family of refractory metal compounds that combine high thermal stability with semiconductor characteristics, making it of interest in specialized electronics and high-temperature applications where conventional semiconductors fail. The compound's notable stiffness and low density suggest potential for advanced electronic devices, radiation-hard components, or high-temperature sensor systems, though it remains primarily a research-stage material rather than a widely commercialized product.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 16,247.4 | ksi | — | ||
| ↳ | 2,620.8 | ksi | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G)2 entries | 7,387.2 | ksi | — | ||
| ↳ | 1,247.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.07865 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.00650 | eV | — | ||
| ↳ | 0.6200 | eV | — | ||
Magnetic Moment(μB) | 1.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1874 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | 0.000 | eV/atom | — | ||
| ↳ | -0.8257 | eV/atom | — |