Hf2 Tc1 Os1

semiconductor

· Hf2 Tc1 Os1

Hf₂Tc₁Os₁ is an experimental intermetallic compound combining hafnium, technetium, and osmium—a research-phase material belonging to the family of refractory metal intermetallics. This composition sits at the intersection of high-temperature materials science and materials informatics, where ternary and quaternary refractory systems are being explored for extreme-environment applications; the material is not yet established in production use and represents early-stage investigation into phase stability and potential functional properties in this alloy family.

high-temperature structural researchrefractory intermetallic developmentcomputational materials screeningaerospace advanced conceptsmaterials database/informaticsextreme environment testing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01970	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6690	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf2 Tc1 Os1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control