Hf2 Ta1 N3
semiconductorHf₂Ta₁N₃ is a refractory ceramic compound belonging to the transition metal nitride family, combining hafnium and tantalum nitrides in a high-entropy ceramic matrix. This material is primarily investigated in research contexts for ultra-high-temperature applications where exceptional thermal stability and hardness are critical, offering potential advantages over traditional refractory carbides and nitrides in extreme aerospace and energy environments. Its mixed-metal composition is designed to leverage the complementary properties of hafnium and tantalum—both among the highest-melting-point transition metals—making it a candidate for next-generation thermal barrier coatings, hypersonic vehicle components, and advanced nuclear fuel cladding where conventional materials reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |