Hf₂Si₂Se₂ is a layered ternary semiconductor compound combining hafnium, silicon, and selenium in a stoichiometric composition. This material belongs to an emerging class of van der Waals heterostructures and layered semiconductors being explored primarily in research settings for next-generation optoelectronic and electronic devices. The hafnium-silicon-selenium family is investigated as a potential alternative to conventional two-dimensional materials, with interest driven by tunable bandgap engineering, thermal stability, and integration potential in nanoelectronic applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 114.1 | GPa | — | ||
Shear Modulus(G) | 78.59 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00520 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9930 | eV/atom | — |