Hf2S6 is a hafnium sulfide compound semiconductor belonging to the transition metal chalcogenide family. This material is primarily investigated in research contexts for potential optoelectronic and electronic device applications, particularly where its layered structure and tunable bandgap characteristics could enable two-dimensional materials research or next-generation semiconductor components. While not yet widely commercialized, hafnium chalcogenides are being explored as alternatives to conventional semiconductors in applications requiring specific thermal, electrical, or photonic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,021.4 | ksi | — | ||
Shear Modulus(G) | 4,485.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.183 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.324 | eV/atom | — |