Hf2 O4

semiconductor

· Hf2 O4

Hf2O4 (hafnium oxide) is a refractory ceramic compound belonging to the hafnia family of oxides, valued for its high thermal stability and wide bandgap semiconductor properties. This material is primarily investigated for advanced applications in microelectronics, photonics, and extreme-environment components, where its chemical inertness and structural rigidity make it attractive as a gate dielectric, optical coating, or thermal barrier in next-generation devices operating at elevated temperatures. As a research-phase material, Hf2O4 represents the hafnium oxide family's potential to enable miniaturization and performance improvements beyond conventional silicon dioxide and standard hafnia applications.

microelectronic gate dielectricshigh-temperature ceramicsoptical coatings and photonicsthermal barrier applicationsrefractory componentsadvanced semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	32,704.4	ksi	—
Shear Modulus(G)	17,505	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.950	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.771	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf2 O4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control