Hf2 I6

semiconductor

· Hf2 I6

Hf₂I₆ is a hafnium iodide compound belonging to the family of metal halide semiconductors, characterized by a layered crystal structure typical of transition metal iodides. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its band gap and charge transport properties are being investigated as an alternative to more commonly studied lead halide perovskites. Hafnium iodides represent an emerging materials class with potential advantages in stability and reduced toxicity compared to conventional semiconductor options, though development remains largely at the experimental stage.

emerging photovoltaic researchhalide perovskite alternativesoptoelectronic devicesstability-focused semiconductorsnext-generation solar cellsmaterials science research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00320	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8850	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf2 I6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control