Hf2 I2 N2

semiconductor

· Hf2 I2 N2

Hf2I2N2 is an experimental hafnium-iodine-nitrogen compound belonging to the semiconductor material family, likely synthesized for advanced materials research rather than established industrial production. This ternary nitride halide represents an emerging class of materials being investigated for potential applications requiring wide bandgap semiconductors, with hafnium's known refractory properties suggesting interest in high-temperature or radiation-resistant device contexts. As a research-phase compound, its practical advantages over conventional semiconductors (such as GaN or SiC) remain under investigation, making it most relevant to materials scientists and engineers exploring next-generation device architectures.

experimental semiconductorswide-bandgap electronics researchhigh-temperature device materialsradiation-hard semiconductorsadvanced materials developmentnext-generation power electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	9,282.4	ksi	—
Shear Modulus(G)	4,919.7	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9903	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.539	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf2 I2 N2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control