Hf2Ge2Se2 is a layered semiconductor compound combining hafnium, germanium, and selenium in a stoichiometric ratio. This material belongs to the family of transition metal chalcogenides and represents an emerging research compound being explored for next-generation optoelectronic and photonic devices where the combination of elements offers tunable bandgap and layered crystal structure properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 112.6 | GPa | — | ||
Shear Modulus(G) | 73.31 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00280 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9590 | eV/atom | — |