Hf₂Ga₁Sb₃ is an experimental ternary semiconductor compound combining hafnium, gallium, and antimony elements, representing a materials research exploration into alternative wide-bandgap or intermediate-gap semiconductors beyond conventional III-V and II-VI compounds. This material family is investigated primarily in academic and advanced research settings for potential applications requiring thermally stable, radiation-resistant, or high-power electronic devices, though industrial adoption remains limited pending validation of reproducibility, scalability, and performance advantages over established semiconductors like GaAs, GaSb, or HfO₂-based systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13,438.6 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 8,736.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01150 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4300 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data