Hf2 Ga1 Sb3

semiconductor

· Hf2 Ga1 Sb3

Hf₂Ga₁Sb₃ is an experimental ternary semiconductor compound combining hafnium, gallium, and antimony elements, representing a materials research exploration into alternative wide-bandgap or intermediate-gap semiconductors beyond conventional III-V and II-VI compounds. This material family is investigated primarily in academic and advanced research settings for potential applications requiring thermally stable, radiation-resistant, or high-power electronic devices, though industrial adoption remains limited pending validation of reproducibility, scalability, and performance advantages over established semiconductors like GaAs, GaSb, or HfO₂-based systems.

High-temperature electronics (research)Radiation-resistant semiconductorsWide-bandgap device explorationAdvanced optoelectronics (emerging)Space/nuclear applications (experimental)Materials discovery

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	92.66	GPa	—
Shear Modulus(G)	60.23	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01150	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4300	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf2 Ga1 Sb3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control