Hf2 Cu1 Ir1
semiconductorHf₂Cu₁Ir₁ is an experimental intermetallic compound combining hafnium, copper, and iridium in a 2:1:1 stoichiometric ratio. This material belongs to the high-entropy or multi-principal-element alloy family, where multiple metallic constituents are intentionally combined to achieve novel microstructural and performance characteristics. Research into such ternary hafnium-based intermetallics is primarily driven by applications requiring exceptional high-temperature stability, corrosion resistance, and thermal management—areas where hafnium's refractory properties and iridium's nobility can be leveraged. The copper addition may be used to tailor phase stability and processing behavior. Due to its experimental nature and limited commercial availability, Hf₂Cu₁Ir₁ remains a laboratory-stage material; similar hafnium intermetallics are being explored for next-generation aerospace, nuclear, and ultra-high-temperature structural applications where conventional superalloys reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |