Hf₁₀Zn₂Sb₆ is an experimental intermetallic semiconductor compound combining hafnium, zinc, and antimony in a fixed stoichiometric ratio. This material belongs to the family of complex metal-antimony semiconductors and is primarily of research interest for thermoelectric and electronic device applications. The compound's potential value lies in its tunable electronic properties and possible thermoelectric performance, making it relevant for next-generation energy conversion and solid-state cooling technologies where conventional semiconductors show limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00360 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4630 | eV/atom | — |