Hf₁₀Sb₁₈ is a hafnium-antimony intermetallic compound belonging to the class of binary semiconducting materials with potential thermoelectric or electronic applications. This is a research-phase material studied primarily for its electronic band structure and potential use in advanced semiconductor devices or thermoelectric energy conversion, rather than a widely commercialized engineering material. The hafnium-antimony system is of interest to materials researchers exploring alternatives to conventional semiconductors, though practical industrial deployment remains limited compared to established semiconductor platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00460 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4180 | eV/atom | — |