Hf₁Zn₁N₂ is a ternary nitride semiconductor compound combining hafnium, zinc, and nitrogen. This is a research-phase material within the wider family of transition metal nitrides, which are studied for their potential as wide-bandgap semiconductors and hard coating materials. The compound represents an exploratory composition that could offer unique electronic and mechanical properties distinct from binary nitrides, though industrial applications remain limited pending further development and characterization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 27,924.6 | ksi | — | ||
Shear Modulus(G) | 13,909.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.361 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.149 | eV/atom | — |