Hf₁V₂Ga₄ is an experimental ternary intermetallic semiconductor compound combining hafnium, vanadium, and gallium. This material belongs to the class of transition metal gallides, which are of research interest for potential optoelectronic and thermoelectric applications due to their tunable electronic properties and structural stability at elevated temperatures. While not yet in widespread industrial production, compounds in this family are being explored for next-generation semiconductor devices where conventional materials face thermal or performance limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,694.5 | ksi | — | ||
Shear Modulus(G) | 12,272.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00150 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3110 | eV/atom | — |