Hf1Tl3 is an intermetallic compound combining hafnium and thallium in a 1:3 stoichiometric ratio, classified as a semiconductor material. This compound belongs to the family of transition metal-thallium intermetallics, which are primarily of research and theoretical interest rather than established commercial materials. The material's semiconductor properties make it relevant to emerging applications in solid-state electronics, photonics, or thermoelectric devices, though practical deployment remains limited and the compound is typically investigated in academic or specialized materials development contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,998.7 | ksi | — | ||
Shear Modulus(G) | 3,502.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00290 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2660 | eV/atom | — |