HfTeSe₄ is an experimental ternary chalcogenide semiconductor compound combining hafnium with tellurium and selenium. This material belongs to the broader family of transition metal chalcogenides, which are under active investigation for optoelectronic and thermoelectric applications due to their tunable bandgaps and layered crystal structures. While not yet commercially established, hafnium-based chalcogenides show promise in next-generation photovoltaics, photodetectors, and solid-state energy conversion devices where their semiconductor properties and thermal stability could offer advantages over more conventional materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 36.09 | GPa | — | ||
Shear Modulus(G) | 23.73 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7761 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6710 | eV/atom | — |