Hf1 Tc1

semiconductor

· Hf1 Tc1

Hf1Tc1 is an intermetallic compound combining hafnium and technetium, belonging to the transition metal compound family with semiconductor characteristics. This material is primarily of research interest rather than established commercial use, explored for potential applications in high-temperature electronics and advanced materials where the combination of refractory metal properties and semiconducting behavior could offer unique performance characteristics. The material represents an emerging compound within the broader class of transition metal intermetallics being investigated for extreme environment applications where conventional semiconductors would fail.

High-temperature semiconductor researchRefractory intermetallic compoundsAdvanced electronics developmentExtreme environment applicationsMaterials science experimentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	190.9	GPa	—
Shear Modulus(G)	76.88	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01020	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4910	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Tc1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control