Hf1 Ta1 Tc2
semiconductorHf₁Ta₁Tc₂ is an experimental refractory intermetallic compound combining hafnium, tantalum, and technetium in a 1:1:2 stoichiometric ratio. This ternary system belongs to the high-entropy and refractory metal alloy family, designed to explore extreme-temperature structural applications where conventional superalloys reach their thermal limits. The inclusion of technetium—a rare, synthetic element—places this firmly in the research domain; the material's significance lies in demonstrating whether unconventional alloying strategies can produce ultra-high-melting-point phases suitable for next-generation hypersonic vehicles, nuclear reactor components, or space propulsion systems where oxidation resistance and strength retention above 2000 °C are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |