Hf₁Sn₁Rh₂ is an experimental intermetallic semiconductor compound combining hafnium, tin, and rhodium. This material belongs to the class of high-entropy and multi-component intermetallics under investigation for advanced electronic and thermal applications where conventional semiconductors reach performance limits. Research on such hafnium-rhodium compounds targets next-generation device applications requiring thermal stability and electrical properties unavailable in traditional silicon-based systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26,392.1 | ksi | — | ||
Shear Modulus(G) | 3,573.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04780 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7400 | eV/atom | — |