Hf₁Sn₁Rh₂ is an experimental intermetallic semiconductor compound combining hafnium, tin, and rhodium. This material belongs to the class of high-entropy and multi-component intermetallics under investigation for advanced electronic and thermal applications where conventional semiconductors reach performance limits. Research on such hafnium-rhodium compounds targets next-generation device applications requiring thermal stability and electrical properties unavailable in traditional silicon-based systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26,392.1 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,573.7 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04780 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7400 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data