Hf1 Sn1 Rh2

semiconductor

· Hf1 Sn1 Rh2

Hf₁Sn₁Rh₂ is an experimental intermetallic semiconductor compound combining hafnium, tin, and rhodium. This material belongs to the class of high-entropy and multi-component intermetallics under investigation for advanced electronic and thermal applications where conventional semiconductors reach performance limits. Research on such hafnium-rhodium compounds targets next-generation device applications requiring thermal stability and electrical properties unavailable in traditional silicon-based systems.

High-temperature semiconductorsThermoelectric devicesResearch and developmentAdvanced electronicsRefractory compound evaluation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	182.0	GPa	—
Shear Modulus(G)	24.64	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04780	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Sn1 Rh2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control