Hf1 Si2 Br1

semiconductor

· Hf1 Si2 Br1

HfSi₂Br is a hafnium silicide bromide compound representing an experimental semiconductor material combining hafnium and silicon with bromine doping or substitution. This material family exists primarily in research contexts exploring wide-bandgap semiconductors and refractory compounds for extreme environment applications, though practical industrial deployment remains limited. The hafnium-silicon backbone offers potential for high-temperature electronics and radiation-hard devices, with bromine incorporation potentially modifying electronic properties or creating novel defect structures.

experimental wide-bandgap semiconductorshigh-temperature electronics researchradiation-hardened devicesrefractory semiconductor compoundsmaterials discovery and characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00180	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5840	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Si2 Br1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control