Hafnium dioxide (HfO₂) is a high-performance ceramic oxide belonging to the refractory oxide family, valued for its exceptionally high melting point and thermal stability. It is widely used in advanced microelectronics as a high-κ dielectric material in next-generation semiconductor gate oxides, replacing traditional SiO₂ to enable continued transistor scaling, and also appears in thermal barrier coatings for aerospace engines, optical applications, and as a nuclear fuel additive. Engineers select HfO₂ over conventional alternatives when extreme thermal resistance, robust dielectric performance at reduced thicknesses, or superior radiation tolerance is required.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37,961.2 | ksi | — | ||
Shear Modulus(G) | 19,965.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 4.037 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.734 | eV/atom | — |