Hf1 Ni1 Ge1

semiconductor

· Hf1 Ni1 Ge1

HfNiGe is an intermetallic compound combining hafnium, nickel, and germanium in equiatomic proportions, belonging to the class of high-entropy or multi-principal element materials. This is primarily a research-phase material explored for potential high-temperature structural applications and electronic devices, where the combination of refractory hafnium with transition metal nickel and semiconductor germanium may offer unique thermal stability and electrical properties not easily achieved in conventional binary or ternary systems.

High-temperature structural researchIntermetallic semiconductorsThermal barrier coatings (experimental)Electronic device researchMaterials informatics databases

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03280	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.01000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Ni1 Ge1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control