Hf1 Mo1 Se1 — Properties & Data | MatWorld

Hf1 Mo1 Se1

semiconductor

· Hf1 Mo1 Se1

HfMoSe is a ternary transition metal chalcogenide compound combining hafnium, molybdenum, and selenium—a material class of strong current research interest for next-generation electronics and optoelectronics. This composition represents an experimental material primarily under investigation in academic and materials research settings for layered semiconductor applications, where the combination of heavy metals and chalcogen frameworks can enable tunable bandgaps and novel electronic properties distinct from binary alternatives like MoSe₂.

2D semiconductor researchnext-generation electronicsthin-film transistorsphotovoltaic devicesoptoelectronic sensorsmaterials exploration studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00240	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5810	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Mo1 Se1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control