Hf1 Mg1 O3

semiconductor

· Hf1 Mg1 O3

Hf1Mg1O3 is a mixed-metal oxide semiconductor composed of hafnium and magnesium. This is a research-phase compound studied for its potential in advanced electronic and optoelectronic applications, particularly where high-κ dielectric properties or wide bandgap semiconducting behavior are desirable. The material belongs to the broader family of ternary oxides being investigated as alternatives to conventional binary oxides in gate dielectrics, thin-film transistors, and high-temperature electronic devices.

advanced semiconductor researchgate dielectric developmenthigh-temperature electronicsthin-film transistorsoptoelectronic devicesmaterials exploration for microelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	174.7	GPa	—
Shear Modulus(G)	90.86	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.118	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.844	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Mg1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control