Hf1In1Rh2 is an intermetallic compound combining hafnium, indium, and rhodium in a defined stoichiometric ratio, classified as a semiconductor material. This is a research-stage compound rather than a commercial product, belonging to the family of ternary intermetallics that are of interest for their potential electronic and thermal properties. The material represents exploratory work in high-performance semiconductors and may be evaluated for applications requiring thermal stability and electronic tunability in extreme environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25,998.9 | ksi | — | ||
Shear Modulus(G) | 11,103.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02480 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7770 | eV/atom | — |