Hf1 In1 Co2

semiconductor

· Hf1 In1 Co2

Hf1In1Co2 is an experimental intermetallic compound combining hafnium, indium, and cobalt in a defined stoichiometric ratio, classified as a semiconductor material. This ternary system represents early-stage research into high-entropy or complex intermetallic phases, which are being explored for applications requiring exceptional thermal stability, corrosion resistance, or specialized electronic properties. The material would be of primary interest to researchers developing next-generation materials for extreme environments or advanced device applications, rather than established industrial production.

high-temperature semiconductor researchintermetallic compound developmentcorrosion-resistant coatings (developmental)advanced electronic devices (experimental)materials physics researchaerospace thermal barrier candidates

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	160.6	GPa	—
Shear Modulus(G)	74.30	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01480	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2960	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 In1 Co2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control