Hf1H3 is a hafnium hydride compound belonging to the metal hydride semiconductor family, representing a transition metal hydride system with potential electronic functionality. This material class is primarily explored in research contexts for applications requiring tunable electronic properties, hydrogen storage studies, and novel semiconductor behavior in metal hydride systems. Hafnium hydrides offer theoretical advantages in extreme environment tolerance and unique band structure characteristics compared to conventional semiconductors, though commercial deployment remains limited and material stability under operational conditions requires careful engineering consideration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 145.0 | GPa | — | ||
Shear Modulus(G) | 73.34 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000900 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2320 | eV/atom | — |