Hf1 Ga1 Ru2

semiconductor

· Hf1 Ga1 Ru2

HfGaRu₂ is an intermetallic compound combining hafnium, gallium, and ruthenium in a 1:1:2 stoichiometric ratio. This is a research-phase material within the broader class of refractory intermetallics, studied for potential high-temperature structural and electronic applications where conventional superalloys reach their limits. While not yet in widespread industrial production, materials in this family are of interest to aerospace and electronics researchers exploring enhanced thermal stability and electrical properties compared to traditional Ni- or Co-based alternatives.

High-temperature structural components (research)Aerospace applications (experimental)Electronic device contactsRefractory intermetallic researchThermal barrier candidates

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03760	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5870	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Ga1 Ru2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control