HfGaRh₂ is an intermetallic compound combining hafnium, gallium, and rhodium—a ternary system that falls within the class of high-melting-point metallic semiconductors. This material is primarily of research interest rather than established commercial production, explored for potential applications requiring thermal stability and electrical properties beyond conventional binary alloys. The hafnium-rhodium base suggests investigation for high-temperature structural or thermoelectric applications, while the gallium incorporation may influence electronic properties relevant to semiconductor device research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 191.1 | GPa | — | ||
Shear Modulus(G) | 20.12 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04630 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8730 | eV/atom | — |