Hf1 Cd1 O3

semiconductor

· Hf1 Cd1 O3

HfCdO₃ is an experimental ternary oxide semiconductor compound combining hafnium and cadmium oxides, belonging to the broader class of wide-bandgap and perovskite-related semiconductor materials. This compound is primarily of research interest for next-generation optoelectronic and high-temperature electronic applications, where the combination of hafnium's thermal stability and cadmium oxide's semiconductor properties may enable novel device architectures. Interest in this material family stems from potential advantages in UV detection, transparent electronics, and extreme-environment sensing where conventional semiconductors (Si, GaAs) are limited.

UV photodetectorsTransparent electronicsHigh-temperature sensorsResearch optoelectronicsWide-bandgap devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.05040	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.453	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 Cd1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control