Hf1 As1 Rh1

semiconductor

· Hf1 As1 Rh1

HfAsRh is an intermetallic compound combining hafnium, arsenic, and rhodium in a 1:1:1 stoichiometry. This is a research-phase material with limited industrial deployment; it belongs to the family of ternary intermetallics being investigated for high-temperature structural applications and specialized electronic devices. The combination of refractory hafnium with transition metals (rhodium) and a metalloid (arsenic) suggests potential for extreme-environment performance, though practical use cases remain largely experimental and material characterization is ongoing.

High-temperature structural researchThermoelectric materials developmentRefractory intermetallic compoundsElectronics and semiconductors (experimental)Materials characterization studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01980	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3810	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hf1 As1 Rh1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control