Hf1 Al1 Ir2
semiconductorHf1Al1Ir2 is an intermetallic compound combining hafnium, aluminum, and iridium in a 1:1:2 ratio, classified as a semiconductor with potential high-temperature and refractory applications. This is an experimental/research-phase material belonging to the family of ternary intermetallics, which are of interest for extreme-environment aerospace and catalytic applications where conventional alloys reach their thermal or chemical limits. The combination of hafnium's refractory properties, iridium's nobility and hardness, and aluminum's lightweight character suggests potential utility in specialized high-temperature coatings, catalytic surfaces, or electronic applications, though industrial deployment remains limited pending further development and characterization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |