H8N4Na4 is an experimental semiconductor compound containing hydrogen, nitrogen, and sodium elements, likely representing a research-phase material rather than a commercial product. This composition suggests investigation into novel nitride-based semiconductors with potential applications in wide-bandgap electronics or energy storage systems. Materials in this chemical family are of interest to researchers exploring alternatives to traditional semiconductors, though industrial adoption remains limited pending further development and property optimization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18.76 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 7.113 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.059 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3860 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data