H8N2Cl6Sn1 is a tin-based halide semiconductor compound combining tin, chlorine, and nitrogen constituents, likely representing a hybrid organic-inorganic perovskite or related coordination complex. This is a research-phase material rather than a commercial product; compounds in this family are investigated for optoelectronic and photovoltaic applications due to tin's reduced toxicity compared to lead-based alternatives in next-generation solar cells and light-emitting devices. Engineers would consider this material class when exploring low-toxicity semiconductor alternatives for thin-film photovoltaics, though practical deployment requires further optimization of stability and device performance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,026.5 | ksi | — | ||
Shear Modulus(G) | 1,624.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.091 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7150 | eV/atom | — |