H6 Al2

semiconductor

· H6 Al2

H6 Al2 is a semiconductor material based on aluminum oxide (alumina, Al2O3), likely referring to a specific crystalline phase or doped variant used in advanced electronic applications. This material combines the thermal stability and electrical insulating properties of alumina with semiconductor functionality, making it relevant for high-temperature device architectures where traditional silicon or gallium arsenide would be unsuitable. Al2O3-based semiconductors are explored in research contexts for power electronics, photonics, and integrated circuits operating in extreme environments where thermal management and chemical resistance are critical.

high-temperature power electronicswide-bandgap semiconductorsintegrated circuit substratesthermal barrier applicationsresearch/advanced materialsextreme environment devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	36.88	GPa	—
Shear Modulus(G)	48.59	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.464	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1030	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

H6 Al2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control