H4O4F4 is a fluorinated oxygen-hydrogen compound that functions as a semiconductor material, likely in an experimental or emerging research context. While this specific stoichiometry is uncommon in commercial applications, fluorine-containing semiconductors are of interest in advanced electronics and photonics research for their potential to modify bandgap properties and chemical stability. Engineers would consider this material primarily in research settings exploring novel fluorinated semiconductor platforms, though conventional semiconductors (Si, GaAs, III-V compounds) remain dominant for established high-volume applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18.47 | GPa | — | ||
Shear Modulus(G) | 12.06 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.199 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4240 | eV/atom | — |