This material is a manganese oxide-sulfate compound (H₄O₁₂S₂Mn₄), a mixed-valence manganese system classified as a semiconductor. Such compounds belong to the family of transition metal oxysulfates, which are primarily of research interest for their electronic properties, crystal structure, and potential catalytic or electrochemical behavior rather than established commercial applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.348 | eV/atom | — |