H₄N₄O₄ is an experimental nitrogen-oxygen-hydrogen compound classified as a semiconductor, likely representing a stoichiometric arrangement within the family of nitrogen oxides or oxynitride materials. This composition sits at the intersection of energetic chemistry and semiconductor physics, and appears to be a research-phase material rather than an established commercial product. The material's potential applications lie in advanced semiconductor devices, energetic material research, or specialized catalytic systems where the nitrogen-oxygen bonding framework offers unique electronic properties distinct from traditional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,763.8 | ksi | — | ||
Shear Modulus(G) | 1,606 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.094 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.07100 | eV/atom | — |