H₄I₄O₁₂ is an iodine-containing oxide compound classified as a semiconductor, likely representing a mixed-valence or layered iodine oxide system with potential applications in advanced electronic and photonic materials. This composition sits within the broader family of halide oxides and mixed-anion semiconductors, which are actively researched for their tunable bandgaps and ionic transport properties. The material's relevance would primarily be in experimental and emerging applications rather than established industrial production, making it a candidate for engineers working on next-generation devices where conventional semiconductors face performance limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 27.77 | GPa | — | ||
Shear Modulus(G) | 20.74 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.085 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5240 | eV/atom | — |